View AP2128_1575479.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 1 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited general description the AP2128 series are positive voltage regulator ics fabricated by cmos pro cess. the AP2128 provides two kinds of output voltage operation modes for setting the output voltage. fixed output voltage mode senses the output voltage on v out , adjustable output voltage mode needs two resistors as a voltage divider the AP2128 series have features of low dropout voltage, low noise, high out put voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. AP2128 has 1.0v, 1.2v, 3.3v fixed voltage version and 0.8v to 4.5v adjustable voltage version. AP2128 series are available in sot-23-5 package. features wide operating voltage: 2.5v to 6v low dropout voltage (3.3v only): 170mv@300ma high output voltage accuracy: 2% high ripple rejection: 65db@ f=1khz, 45db@ f=10khz low standby current: 0.1 a low quiescent current: 60 a typical low output noise: 60 vrms short current limit: 50ma over temperature protection compatible with low esr ceramic capacitor: 1 f for c in and c out excellent line/load regulation soft start time : 50 s auto discharge resistance: r ds(on) =60 ? applications datacom notebook computers mother board figure 1. package type of AP2128 sot-23-5
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 2 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited figure 2. pin configuration of AP2128 (top view) pin configuration 4 k package (sot-23-5) 2 3 1 5 v in gnd v out adj/nc shutdown functional block diagram uvlo & shutdown logic thermal shutdown foldback current limit v ref gnd shutdown nc vout vin 3m ? fixed version
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 3 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited functional block di agram (continued) uvlo & shutdown logic thermal shutdown foldback current limit v ref gnd shutdown adj vout vin 3m ? figure 3. functional block diagram of AP2128 adjustable version
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 4 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited bcd semiconductor's products, as designated with "g1" suffix in the pa rt number, are rohs compliant and green. circuit type package k: sot-23-5 AP2128 - tr: tape and reel ordering information adj: adj output g1: green 1.0: fixed output 1.0v 1.2: fixed output 1.2v 3.3: fixed output 3.3v product package temperature range part number marking id packing type green green AP2128 sot-23-5 -40 to 85 o c AP2128k- adjtrg1 fad tape & reel AP2128k-1.0trg1 faj tape & reel AP2128k-1.2trg1 fak tape & reel AP2128k-3.3trg1 fal tape & reel
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 5 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited parameter symbol value unit input voltage v in 6.5 v shutdown input voltage v ce -0.3 to v in +0.3 v output current i out 450 ma junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c thermal resistance r ja 250 o c/w esd (human body model) esd 6000 v esd (machine model) esd 300 v absolute maximum ratings (note 1) parameter symbol min max unit input voltage v in 2.5 6 v operating junction temperature range t j -40 85 o c recommended operating conditions note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability.
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 6 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited electrical characteristics (AP2128-adj, v in min=2.5v, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) parameter symbol conditions min typ max unit reference voltage v ref v in =2.5v 1ma i out 300ma 0.748 0.8 0.816 v input voltage v in 2.5 6 v maximum output current i out(max) 450 ma load regulation ? v out /( ? i out* v out ) v in -v out =1v, 1ma i out 300ma 0.6 %/a line regulation ? v out /( ? v in *v out ) v out +0.5v v in 6v i out =30ma 0.06 %/v quiescent current i q v in =v out +1v, i out = 0ma 60 90 a standby current i std v in =v out +1v, v shutdown in off mode 0.1 1.0 a power supply rejection ratio psrr ripple 1vp-p v in =v out +1v f=100hz 65 db f=1khz 65 db f=10khz 45 db output voltage temperature coefficient ( ? v out /v out ) / ? t i out =30ma, -40 o c t j 85 o c 100 ppm/ o c output current limit i limit 400 ma short current limit i short v out =0v 50 ma soft start time t up 50 s rms output noise v noise t a =25 o c, 10hz f 100khz 60 vrms shutdown "high" voltage shutdown input voltage "high" 1.5 6 v shutdown "low" voltage shutdown input voltage "low" 0 0.4 v v out discharge mosfet r ds(on) shutdown input voltage "low" 60 ? shutdown pull down resis- tance 3 m ? thermal shutdown 165 o c thermal shutdown hysteresis 30 o c
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 7 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out v in =v out +1v 1ma i out 300ma 98%* v out 102%* v out v input voltage v in 2.5 6 v maximum output current i out(max) 450 ma load regulation ? v out /( ? i out* v out ) v in -v out =1v, 1ma i out 300ma 0.6 %/a line regulation ? v out /( ? v in *v out ) v out +0.5v v in 6v i out =30ma 0.06 %/v dropout voltage v drop v out =1.0v, i out =300ma 1400 1500 mv v out =1.2v, i out =300ma 1200 1300 v out =3.3v, i out =300ma 170 300 quiescent current i q v in =v out +1v, i out = 0ma 60 90 a standby current i std v in =v out +1v, v shutdown in off mode 0.1 1.0 a power supply rejection ratio psrr ripple 1vp-p v in =v out +1v f=100hz 65 db f=1khz 65 db f=10khz 45 db output voltage temperature coefficient ( ? v out /v out ) / ? t i out =30ma, -40 o c t j 85 o c 100 ppm/ o c output current limit i limit v in -v out =1v, v out =0.98*v out 400 ma short current limit i short v out =0v 50 ma soft start time t up 50 s rms output noise v noise t a =25 o c, 10hz f 100khz 60 vrms shutdown "high" voltage shutdown input voltage "high" 1.5 6 v shutdown "low" voltage shutdown input voltage "low" 0 0.4 v v out discharge mosfet r ds(on) shutdown input voltage "low" 60 ? shutdown pull down resis- tance 3 m ? thermal shutdown 165 o c thermal shutdown hysteresis 30 o c electrical characteristics (continued) (AP2128-1.0v/1.2v,v in min. =2.5v, AP2128-3.3v, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 8 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited typical performance characteristics figure 4. output voltage vs. output current figure 5. dropout voltage vs. output current, v out =3.3v figure 6. quiescent current vs. output current 0 50 100 150 200 250 300 350 400 450 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) output current (ma) t c =-40 o c t c =25 o c t c =125 o c v in =4.4v 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 220 240 dropout voltage (mv) output current (ma) t c =-40 o c t c =25 o c t c =125 o c 0 50 100 150 200 250 300 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 quiescent current ( a) output current (ma) t c =-40 o c t c =25 o c t c =85 o c v in =2.5v, v out =0.8v 0 100 200 300 400 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 output voltge (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c v in =2.5v, v out =0.8v -40-20 0 20406080100120 50 52 54 56 58 60 62 64 66 68 70 quiescent current ( a) case temperature ( o c) i out =0 v in =2.5v, v out =0.8v figure 7. quiescent current vs. case temperature
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 9 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 8. quiescent current vs. input voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 10 20 30 40 50 60 70 80 quiescent current ( a) input voltage (v) t c =25 o c v out =0.8v, i out =0 figure 9. output voltage vs. case temperature -40 -20 0 20 40 60 80 100 120 0.801 0.802 0.803 0.804 0.805 0.806 0.807 output voltage (v) case temperature ( o c) v in =2.5v, c in =c out =1uf i out =10ma, v out =0.8v figure 10. short current vs. case temperature -40 -20 0 20 40 60 80 100 120 26 28 30 32 34 short current (ma) case temperature ( o c) v in =2.5v, v out =0.8v, c in =c out =1 f 012345678 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 output voltge (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c v out =0.8v figure 11. output voltage vs. input voltage (i out =0ma)
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 10 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 12. output voltage vs. input voltage (i out =300ma) 0123456 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 output voltge (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c v out =0.8v figure 14. load transient (conditions: c in =c out =1 f, v in =2.5v, v out =0.8v) i out v out figure 15. load transient (conditions: c in =c out =1 f, v in =4.4v, v out =3.3v) i out v out figure 13. power dissipation vs. case temperature -40 -20 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 power dissipation (w) case temperature( o c) v out =0.8v no heatsink
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 11 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 16. line transient (conditions: i out =30ma, c in =c out =1 f, v in =2.5 to 3.5v, v out =0.8v) figure 17. line transient (conditions: i out =30ma, c in =c out =1 f, v in =4 to 5v, v out =3.3v) v in v out v in v out figure 18. soft start time (conditions: i out =0ma, c in =c out =1 f, v shutdown =0 to 2v, v out =3.3v) v out v shutdown figure 19. soft start time (conditions: i out =0ma, c in =c out =1 f, v shutdown =0 to 2v, v out =0.8v) v out v shutdown
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 12 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 21. psrr vs. frequency 100 1000 10000 100000 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) i out =10ma i out =300ma ripple=1vpp, c out =1 f, v out =3.3v figure 20. pssr vs. frequency 100 1000 10000 100000 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) i out =10ma i out =300ma ripple=1vpp, c out =1 f, v out =0.8v
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 13 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited typical application v out =0.8*(1+r1/r2) v v in v in v out v out shutdown gnd c out 1 f c in 1 f AP2128 v in v in v out v out adj shutdown gnd c out 1 f c in 1 f r1 r2 AP2128 v out =1.0, 1.2, 3.3v figure 22. typical application of AP2128
300ma high speed, extremely low noise cmos ldo regulator AP2128 data sheet 14 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 1 . 0 5 0 ( 0 . 0 4 1 ) 0.300(0.012) 0.950(0.037) 1 . 0 5 0 ( 0 . 0 4 1 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 1 . 2 5 0 ( 0 . 0 4 9 ) 0 . 1 0 0 ( 0 . 0 0 4 ) 1 . 1 5 0 ( 0 . 0 4 5 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen, 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

▲Up To Search▲

Price & Availability of AP2128

	To Download AP2128 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .